IRF1010EPBF Datasheet, mosfet equivalent, International Rectifier

PDF File Details

Part number:

IRF1010EPBF

Manufacturer:

International Rectifier

File Size:

250.75kb

Download:

📄 Datasheet

Description:

Power mosfet. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

Datasheet Preview: IRF1010EPBF 📥 Download PDF (250.75kb)
Page 2 of IRF1010EPBF Page 3 of IRF1010EPBF

IRF1010EPBF Application

  • Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 5

TAGS

IRF1010EPBF
Power
MOSFET
International Rectifier

📁 Related Datasheet

IRF1010E - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF1010E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E, IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement .

IRF1010EL - Power MOSFET (International Rectifier)
PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.

IRF1010ELPbF - HEXFET Power MOSFET (International Rectifier)
PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch.

IRF1010ES - Power MOSFET (International Rectifier)
PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.

IRF1010ES - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IRF1010ESPbF - HEXFET Power MOSFET (International Rectifier)
PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch.

IRF1010EZ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IRF1010EZ,IIRF1010EZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching .

IRF1010EZ - AUTOMOTIVE MOSFET (International Rectifier)
PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ult.

IRF1010EZL - AUTOMOTIVE MOSFET (International Rectifier)
PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ult.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts